Formation of sharp metal-organic semiconductor interfaces: Ag and Sn on CuPc

被引:8
作者
Aristov, V. Yu. [1 ]
Molodtsova, O. V.
Zhilin, V. M.
Ossipyan, Yu. A.
Vyalikh, D. V.
Doyle, B. P.
Nannarone, S.
Knupfer, M.
机构
[1] IFW Dresden, D-01069 Dresden, Germany
[2] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Moscow Distr, Russia
[3] Tech Univ Dresden, Inst Solid State Phys, D-01069 Dresden, Germany
[4] TASC INFM Lab, I-34012 Trieste, Italy
[5] Univ Modena & Reggio Emilia, Dipartimento Ingn Mat & Amb, I-41100 Modena, Italy
关键词
D O I
10.1140/epjb/e2007-00192-5
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
A detailed investigation of the chemistry and electronic structure during the formation of the interfaces between thin films of the archetypal organic molecular semiconductor copper phthalocyanine (CuPc) and Ag or Sn deposited on it was performed using photoemission and near-edge X-ray absorption spectroscopies with synchrotron light. Our study demonstrates the formation of sharp, abrupt interfaces, a behavior which is of particular importance for applications in organic devices. Moreover, for Ag on CuPc we demonstrate that this interface is free from any reaction, whereas there is slight interface reaction for Sn/CuPc.
引用
收藏
页码:379 / 384
页数:6
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