The influence of hydrogen ion bombardment on plasma-assisted hydrocarbon film growth

被引：27

作者：

Hopf, C ^{[1
]}

von Keudell, A ^{[1
]}

Jacob, W ^{[1
]}

机构：

[1] EURATOM, Max Planck Inst Plasmaphys, Ctr Interdisciplinary Plasma Sci, D-85748 Garching, Germany

来源：

关键词：

amorphous hydrogenated carbon; growth; ion bombardment; ellipsometry; DIAMOND-LIKE CARBON; QUANTIFICATION; COATINGS; EROSION;

D O I：

10.1016/S0925-9635(03)00007-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The influence of hydrogen ion bombardment on plasma deposition of amorphous hydrogenated carbon films is investigated in a particle beam experiment employing sources for methyl radicals as carbon carrying precursor, for atomic hydrogen, and for low energy ions. Elementary plasma-surface processes such as ion-induced formation of surface dangling bonds (dbs) and ion-induced formation of molecules in the subsurface region are studied. It is shown that the absolute growth rate can be dominated by the flux of atomic hydrogen towards the growing film surface since the ion-induced formation of surface dbs may be largely compensated by hydrogen addition. The film properties are dominated by subsurface hydrogen depletion caused by the ion bombardment. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：85 / 89

页数：5

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