Gallium oxide as an insulating barrier for spin-dependent tunneling junctions

被引：107

作者：

Li, ZS ^{[1
]}

de Groot, C ^{[1
]}

Moodera, JH ^{[1
]}

机构：

[1] MIT, Francis Bitter Natl Magnet Lab, Cambridge, MA 02139 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 22期

关键词：

D O I：

10.1063/1.1329169

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Spin-dependent tunneling has been shown to occur through Ga2O3 as the insulating tunnel barrier. Magnetic tunnel junctions of the type Co/Ga2O3/Ni80Fe20 were prepared by oxidizing thin metal layer of Ga in oxygen plasma and characterized. The highest junction magnetoresistance observed was 18.2% at room temperature, increasing to 27.6% at 77 K. The average barrier height was estimated to be about 2 eV, as opposed to over 3 eV for junctions with Al2O3 barrier of comparable quality. Otherwise these junctions behave similar to those with Al2O3. This shows the feasibility of obtaining lower resistance junctions with Ga2O3 as the barrier for magnetic storage applications. (C) 2000 American Institute of Physics. [S0003-6951(00)04348-5].

引用

页码：3630 / 3632

页数：3

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