High-sensitivity BiCMOS, OEIC for optical storage systems

被引：25

作者：

Kieschnick, K ^{[1
]}

Zimmermann, H ^{[1
]}

机构：

[1] Univ Kiel, Chair Semicond Elect, D-24098 Kiel, Germany

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2003年 / 38卷 / 04期

关键词：

amplifier; CD; digital versatile disk (DVD); optical storage system; optoelectronic integrated circuit (OEIC); photodiode;

D O I：

10.1109/JSSC.2003.809513

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new BiCMOS optoelectronic integrated circuit (OEIC) for applications in advanced optical storage systems is presented. It is optimized with respect to high sensitivity and high speed. The photodiode and the amplifier are monolithically integrated on the same substrate in a commercial 0.8-mum BiCMOS process. Analytical expressions for the compensation capacitors and for the bandwidth of the OEIC are derived. Neglecting antireflection coating, no process modifications are necessary to produce the integrated photodiodes. A new offset compensation scheme is implemented in the amplifiers to allow for a small chip area and low power consumption. The OEIC shows a sensitivity of 43.3 mV/muW in combination with a -3-dB bandwidth of 60.2 MHz.

引用

页码：579 / 584

页数：6

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