The structure, device physics, and material properties of thin film electroluminescent displays

被引:449
作者
Rack, PD [1 ]
Holloway, PH [1 ]
机构
[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
关键词
electroluminescence; flat panel displays; phosphor; zinc sulfide; strontium sulfide; full color displays; insulators; thin film; brightness; luminescent transitions;
D O I
10.1016/S0927-796X(97)00010-7
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Thin film electroluminescent (TFEL) displays are complex optoelectronic devices with challenging material requirements. The multilayer device structure includes two electrodes (one metallic and one transparent), two insulators, and a semiconducting 'phosphor' layer. Each layer has unique electronic and optical properties that must be satisfied for device operation. In this article, we review the device structure, the electrical and optical device physics, and the material properties of TFEL displays. Particular attention is given to the phosphor layer properties and the radiative recombination phenomenon that is responsible for luminescence. The current status of the red, green, blue and white TFEL phosphors is also reviewed, and the current and future applications are discussed. (C) 1998 Elsevier Science S.A.
引用
收藏
页码:171 / 219
页数:49
相关论文
共 100 条
[1]  
ALT PM, 1984, SID DIGEST, P79
[2]  
ASKELAND DR, 1994, SCI ENG MAT, P32
[3]  
BAILEY P, 1995, SID DIGEST, P484
[4]   SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J].
BARDEEN, J .
PHYSICAL REVIEW, 1947, 71 (10) :717-727
[5]  
BARROW WA, 1984, SID INT S, P249
[6]  
BARROW WA, 1993, SID 93 DIGEST, P761
[7]   MONTE-CARLO SIMULATION OF ELECTRON-TRANSPORT IN ALTERNATING-CURRENT THIN-FILM ELECTROLUMINESCENT DEVICES [J].
BHATTACHARYYA, K ;
GOODNICK, SM ;
WAGER, JF .
JOURNAL OF APPLIED PHYSICS, 1993, 73 (07) :3390-3395
[8]  
BHATTACHARYYA K, UNPUB
[9]  
BLASSE G, 1994, LUMINESCENT MAT, P38
[10]  
Blasse G., 1994, LUMINESCENT MAT, P16