Characterization of surface defects on MgO thin films by ultraviolet photoelectron and metastable impact electron spectroscopies

被引:51
作者
Kolmakov, A [1 ]
Stultz, J [1 ]
Goodman, DW [1 ]
机构
[1] Texas A&M Univ, Dept Chem, College Stn, TX 77842 USA
关键词
D O I
10.1063/1.1313239
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Metastable impact electron spectroscopy (MIES) and ultraviolet photoelectron spectroscopy are used in this study to investigate low-defect and defective MgO(100) thin films. Unlike low-defect films, defective films exhibit a new spectroscopic feature located similar to2 eV above the top of valence band. Exposing the defective film to oxygen quenches the emission of electrons from F centers created on the surface and in the subsurface regions. Extended defects, unseen in the MIES spectra of the clean surface, are detectable using NO titration. MIES and thermal programmed desorption indicate that at similar to 100 K NO adsorbs dissociatively on defects, forming N2O. Only a small fraction of the MgO surface becomes covered with N2O at similar to 100 K for the low-defect MgO film indicating that N2O molecules preferentially adsorb on the extended defects. The saturation coverage of N2O increases appreciably for the defective sample. (C) 2000 American Institute of Physics. [S0021-9606(00)71341-9].
引用
收藏
页码:7564 / 7570
页数:7
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