Electron-polariton scattering in semiconductor microcavities

被引：49

作者：

Lagoudakis, PG ^{[1
]}

Martin, MD

Baumberg, JJ

Qarry, A

Cohen, E

Pfeiffer, LN

机构：

[1] Univ Southampton, Dept Phys & Astron, Southampton SO17 1BJ, Hants, England

[2] Technion Israel Inst Technol, Inst Solid State, IL-32000 Haifa, Israel

[3] Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

来源：

PHYSICAL REVIEW LETTERS | 2003年 / 90卷 / 20期

关键词：

D O I：

10.1103/PhysRevLett.90.206401

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In semiconductor microcavities, electron-polariton scattering has been proposed as an efficient process that can drive polaritons from the bottleneck region to the ground state, achieving Bose amplification of the optical emission. We present clear experimental observation of this process in a structure that allows control of the electron density and we report substantial enhancement of photoluminescence. We show that this enhancement is more effective at higher temperatures due to the different way that electron scattering processes either broaden or relax polaritons.

引用

页数：4

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