Deep ultraviolet enhanced wet chemical etching of gallium nitride

被引：109

作者：

Peng, LH ^{[1
]}

Chuang, CW

Ho, JK

Huang, CN

Chen, CY

机构：

[1] Natl Taiwan Univ, Grad Inst Electroopt Engn, Taipei 10764, Taiwan

[2] Ind Technol Res Inst, Optoelect & Syst Labs, Hsinchu, Taiwan

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 08期

关键词：

D O I：

10.1063/1.120879

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a study of the ultraviolet (UV) irradiation effects on the wet chemical etching of unintentionally doped n-type gallium nitride (GaN) layers grown on sapphire substrates. When illuminated with a 253.7 nm mercury line source, etching of GaN is found to take place in aqueous phosphorus acid (H3PO4) and potassium hydroxide (KOH) solutions of pH values ranging from -1 to 2 and 11 to 15, respectively. Formation of I:allium oxide is observed on GaN when illuminated in dilute H3PO4 and KOH solutions. These results are attributed to a two-step reaction process upon which the UV irradiation is shown to enhance the oxidative dissolution of GaN. (C) 1998 American Institute of Physics.

引用

页码：939 / 941

页数：3

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