Fully-depleted SOI CMOS for analog applications

被引：91

作者：

Colinge, JP ^{[1
]}

机构：

[1] Univ Calif Davis, Dept Elect & Comp Engn, Davis, CA 95616 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1998年 / 45卷 / 05期

关键词：

analog integrated circuits; HF amplifiers; microwave circuits; random access memories; silicon-on-insulator technology; SIMOX; thermal factors;

D O I：

10.1109/16.669511

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Fully-depleted (FD) SOI MOSFET's offer near-ideal properties for analog applications. In particular their high transconductance to drain current ratio allows one to obtain a higher gain than from bulk de,ices, and the reduced body effect permits one to fabricate more efficient pass gates. The excellent behavior of SOI MOSFET's at high temperature or at gigahertz frequencies is outlined as well.

引用

页码：1010 / 1016

页数：7

共 40 条

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