Simulation of the 'brittle-ductile transition in silicon single crystals using dislocation mechanics' - Discussion

There is a subtle difference in the understanding of experimental data between Y.B. Xin and K.J. Hsia, and P.B. Hirsch and S.G. Roberts regarding the sharpness of the brittle-ductile transition in Si. Although they all agree that the sudden jump of the applied stress or stress intensity at the transition temperature occurs within a few degrees Kelvin, Hirsch and Roberts seem to believe that there is no increase in stress intensity in Si below the transition temperature. However, Xin and Hsia think that there is a slight increase in stress intensity at fracture as temperature increases toward the transition temperature. Xin and Hsia's response to Hirsch and Roberts' comments on the simulation of the BDT in Si single crystals is presented.