Dry etching of ZnO films and plasma-induced damage to optical properties

被引：56

作者：

Park, JS

Park, HJ

Hahn, YB ^{[1
]}

Yi, GC

Yoshikawa, A

机构：

[1] Chonbuk Natl Univ, Sch Chem Engn & Technol, Semicond Phys Res Ctr, Chonju 561756, South Korea

[2] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, South Korea

[3] Chiba Univ, Ctr Frontier Elect & Photon, Chiba 2638522, Japan

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2003年 / 21卷 / 02期

关键词：

D O I：

10.1116/1.1563252

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

To study the effects of plasma chemistries on etch characteristics. and plasma-induced damage to the optical properties, dry etching of ZnO films has been carried out using inductively coupled plasmas of Cl-2 /Ar, Cl-2 /H-2 /Ar, and CH4 /H-2 /Ar. The CH4 /H-2 /Ar chemistry showed a faster etch rate and a better surface morphology than the Cl-2-based chemistries. Etched samples in all chemistries showed a substantial decrease in the PL intensity of band-edge luminescence mainly due to the plasma-induced damage. The CH4 /H-2 /Ar chemistry showed the least degradation of the optical properties. (C) 2003 American Vacuum Society. [DOI: 10.1116/1.1563252].

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收藏

页码：800 / 803

页数：4

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