Growth and electronic structure of Dy silicide on Si(111)

被引：12

作者：

Vandre, S

Kalka, T

Preinesberger, C

Manke, I

Eisele, H

Dahne-Prietsch, M

Meier, R

Weschke, E

Kaindl, G

机构：

[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

[2] Free Univ Berlin, Inst Expt Phys, D-14195 Berlin, Germany

来源：

APPLIED SURFACE SCIENCE | 1998年 / 123卷

关键词：

D O I：

10.1016/S0169-4332(97)00439-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report on a study of core-level photoemission spectroscopy and scanning tunneling microscopy of dysprosium silicide grown on n-type Si(111). The structure of the silicide was found to be different for submonolayers and thicker films. In the monolayer regime, an extremely low Schottky-barrier height was observed, (C) 1998 Elsevier Science B.V.

引用

收藏

页码：100 / 103

页数：4

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