An investigation into the early stages of oxide growth on gallium nitride

被引：83

作者：

Wolter, SD

DeLucca, JM

Mohney, SE ^{[1
]}

Kern, RS

Kuo, CP

机构：

[1] Penn State Univ, University Pk, PA 16802 USA

[2] Hewlett Packard Co, Div Optoelect, San Jose, CA 95134 USA

来源：

THIN SOLID FILMS | 2000年 / 371卷 / 1-2期

基金：

美国国家科学基金会;

关键词：

oxides; X-ray photoelectron spectroscopy (XPS); gallium nitride; oxynitride;

D O I：

10.1016/S0040-6090(00)00984-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The early stages of thermal oxidation of gallium nitride epilayers in dry O-2 have been studied using surface sensitive analytical techniques and transmission electron microscopy. Deconvolution of the Ga 3d core level spectra from X-ray photoelectron spectroscopy revealed peak positions representing gallium nitride, gallium oxide, and an intermediate phase. Transmission electron microscopy revealed an overlayer approximately 1.5-3.0 nm thick with registry to the (0001) GaN after dry oxidation at 800 degrees C for 1 h. Based on the data from X-ray photoelectron spectroscopy, this layer is believed to be a Ga(x+2)N3xO(3-3x) compound. Atomic force microscopy and transmission electron microscopy revealed the formation of discrete oxide crystallites on top of the oxynitride layer. The crystallites become more numerous and grow with continued oxidation. (C) 2000 Published by Elsevier Science S.A. All rights reserved.

引用

页码：153 / 160

页数：8

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