Low-field magnetoresistive property of partially crystallized La0.5Sr0.5MnO3 thin films by pulsed laser deposition

被引:9
作者
Liu, JM [1 ]
Huang, Q
Li, J
You, LP
Xu, SY
Ong, CK
Liu, ZG
Du, YW
机构
[1] Nanjing Univ, Solid State Microstruct Lab, Nanjing 210093, Peoples R China
[2] Natl Univ Singapore, Ctr Superconducting & Magnet Mat, Singapore 119260, Singapore
[3] Inst Mat Res & Engn, Singapore 119260, Singapore
[4] Natl Univ Singapore, Dept Phys, Singapore 119260, Singapore
基金
中国国家自然科学基金;
关键词
D O I
10.1063/1.1288693
中图分类号
O59 [应用物理学];
学科分类号
摘要
La0.5Sr0.5MnO3 thin films deposited on (001) SrTiO3 substrates at different temperatures are prepared using pulsed laser deposition, and their electro- and magnetotransport properties are experimentally evaluated. The structure analysis reveals that the thin films show amorphous, mixed amorphous/nanocrystalline as well as epitaxial microstructures, respectively, depending on the deposition temperature. While the amorphous thin film exhibits variable range hopping conduction, the epitaxial sample is metal like and ferromagnetic. Enhanced low-field magnetoresistance at low temperature for the microstructure in which the nanocrystalline phase and amorphous phase coexist is demonstrated. It is argued that the amorphous layer separating the neighboring nanocrystals behaves as barrier for the spin-dependent tunneling, resulting in enhanced magnetoresistance at low magnetic field. The modified two-channel model where the insulating conduction channel and the spin-ordered and metallic conduction channel coexist in parallel is employed to explain the magnetotransport phenomena. (C) 2000 American Institute of Physics. [S0021-8979(00)06418-5].
引用
收藏
页码:2791 / 2798
页数:8
相关论文
共 20 条
[1]   High-field magnetoresistance at interfaces in manganese perovskites [J].
Balcells, L ;
Fontcuberta, J ;
Martínez, B ;
Obradors, X .
PHYSICAL REVIEW B, 1998, 58 (22) :14697-14700
[2]   Enhanced field sensitivity close to percolation in magnetoresistive La2/3Sr1/3MnO3/CeO2 composites [J].
Balcells, L ;
Carrillo, AE ;
Martínez, B ;
Fontcuberta, J .
APPLIED PHYSICS LETTERS, 1999, 74 (26) :4014-4016
[3]  
de Andrés A, 1999, APPL PHYS LETT, V74, P3884, DOI 10.1063/1.124212
[4]   Colossal magnetoresistance of ferromagnetic manganites: Structural tuning and mechanisms [J].
Fontcuberta, J ;
Martinez, B ;
Seffar, A ;
Pinol, S ;
GarciaMunoz, JL ;
Obradors, X .
PHYSICAL REVIEW LETTERS, 1996, 76 (07) :1122-1125
[5]  
HUANG Q, UNPUB
[6]   LATTICE EFFECTS ON THE MAGNETORESISTANCE IN DOPED LAMNO3 [J].
HWANG, HY ;
CHEONG, SW ;
RADAELLI, PG ;
MAREZIO, M ;
BATLOGG, B .
PHYSICAL REVIEW LETTERS, 1995, 75 (05) :914-917
[7]   Spin-polarized intergrain tunneling in La-2/Sr-3(1)/3MnO3 [J].
Hwang, HY ;
Cheong, SW ;
Ong, NP ;
Batlogg, B .
PHYSICAL REVIEW LETTERS, 1996, 77 (10) :2041-2044
[8]   THOUSANDFOLD CHANGE IN RESISTIVITY IN MAGNETORESISTIVE LA-CA-MN-O FILMS [J].
JIN, S ;
TIEFEL, TH ;
MCCORMACK, M ;
FASTNACHT, RA ;
RAMESH, R ;
CHEN, LH .
SCIENCE, 1994, 264 (5157) :413-415
[9]   Intergrain magnetoresistance via second-order tunneling in perovskite manganites [J].
Lee, S ;
Hwang, HY ;
Shraiman, BI ;
Ratcliff, WD ;
Cheong, SW .
PHYSICAL REVIEW LETTERS, 1999, 82 (22) :4508-4511
[10]   Magnetoresistance in oxygen deficient La0.75Sr0.25MnO3-δ thin films prepared by pulsed laser deposition [J].
Li, J ;
Liu, JM ;
Li, HP ;
Fang, HC ;
Ong, CK .
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1999, 202 (2-3) :285-291