Effects of void formation on electrical and optical properties of 3C-SiC on Si(111) substrates

Crystalline 3C-SiC thin films are grown on Si(lll) using two different processes in order to investigate effects of void formation on electrical and optical properties. The void formation in the Si side of the SiC/Si interface, normally observed because of the outdiffusion of Si atoms from the Si substrate, have been suppressed by heating the substrate up to 1200 degrees C after starting the flow of TMS. As grown SiC films appear to be n-type with the carrier concentration of 1.48x10(16) cm(-3) and the electron mobility of 884 cm(2)/V . s. Electrical properties were improved when the interface of the sample is free from voids. The PL peak energy of free films of SiC slightly increases in the sample where void formation is suppressed.