Optical properties of low band gap GaAs(1-x)Nx layers:: Influence of post-growth treatments

被引：184

作者：

Rao, EVK ^{[1
]}

Ougazzaden, A ^{[1
]}

Le Bellego, Y ^{[1
]}

Juhel, M ^{[1
]}

机构：

[1] France Telecom SA, CNET, PAB, Labs Bagneux, F-92225 Bagneux, France

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 12期

关键词：

D O I：

10.1063/1.120579

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A detailed study on the optical quality of atmospheric pressure metalorganic vapor phase epitaxy grown GaAs(1-x)N-x epilayers (on GaAs substrates) in which the N incorporation is accomplished using dimethylhydrazine precursor is reported. We show here that the poor optical quality of these as-grown layers can be significantly improved by carefully planned post-growth heat treatments. Optical data are presented to demonstrate unambiguously that such treatments affect in no way the physical properties of these metastable layers (no phase separation) and that the improvement of their optical quality is closely connected to the incorporation behavior of N in this growth method. (C) 1998 American Institute of Physics.

引用

页码：1409 / 1411

页数：3

共 17 条

[1] Localization and percolation in semiconductor alloys: GaAsN vs GaAsP [J].

Bellaiche, L ;

Wei, SH ;

Zunger, A .

PHYSICAL REVIEW B, 1996, 54 (24) :17568-17576

[2] Bowing parameter of the band-gap energy of GaNxAs1-x [J].

Bi, WG ;

Tu, CW .

APPLIED PHYSICS LETTERS, 1997, 70 (12) :1608-1610

[3] Nitrogen-dihydrogen complex in GaP [J].

Clerjaud, B ;

Cote, D ;

Hahn, WS ;

Lebkiri, A ;

Ulrici, W ;

Wasik, D .

PHYSICAL REVIEW LETTERS, 1996, 77 (24) :4930-4933

[4] Extremely large N content (up to 10%) in GaNAs grown by gas-source molecular beam epitaxy [J].

Kondow, M ;

Uomi, K ;

Kitatani, T ;

Watahiki, S ;

Yazawa, Y .

JOURNAL OF CRYSTAL GROWTH, 1996, 164 (1-4) :175-179

[5] Room-temperature continuous-wave operation of GaInNAs/GaAs laser diode [J].

Kondow, M ;

Natatsuka, S ;

Kitatani, T ;

Yazawa, Y ;

Okai, M .

ELECTRONICS LETTERS, 1996, 32 (24) :2244-2245

[6] GAS-SOURCE MOLECULAR-BEAM EPITAXY OF GANXAS1-X USING A N RADICAL AS THE N-SOURCE [J].

KONDOW, M ;

UOMI, K ;

HOSOMI, K ;

MOZUME, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1994, 33 (8A) :L1056-L1058

[7] OBSERVATION OF RECOMBINATION-ENHANCED DEFECT REACTIONS IN SEMICONDUCTORS [J].

LANG, DV ;

KIMERLING, LC .

PHYSICAL REVIEW LETTERS, 1974, 33 (08) :489-492

[8] Room temperature continuous-wave photopumped operation of 1.22 mu m GaInNAs/GaAs single quantum well vertical-cavity surface-emitting laser [J].

Larson, MC ;

Kondow, M ;

Kitatani, T ;

Yazawa, Y ;

Okai, M .

ELECTRONICS LETTERS, 1997, 33 (11) :959-960

[9]

LEBELLEGO Y, 1997, 39 EL MAT C FORT COL

[10] Metal organic vapor phase epitaxy growth of GaAsN on GaAs using dimethylhydrazine and tertiarybutylarsine [J].

Ougazzaden, A ;

LeBellego, Y ;

Rao, EVK ;

Juhel, M ;

Leprince, L ;

Patriarche, G .

APPLIED PHYSICS LETTERS, 1997, 70 (21) :2861-2863

← 1 2 →