Deep-level impurities in CdTe/CdS thin-film solar cells

被引：153

作者：

Balcioglu, A ^{[1
]}

Ahrenkiel, RK ^{[1
]}

Hasoon, F ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 88卷 / 12期

关键词：

D O I：

10.1063/1.1326465

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied deep-level impurities in CdTe/CdS thin-film solar cells by capacitance-voltage (C-V), deep-level transient spectroscopy (DLTS), and optical DLTS (ODLTS). CdTe devices were grown by close-spaced sublimation. Using DLTS, a dominant electron trap and two hole traps were observed. These traps are designated as E1 at E-C-0.28 eV, H1 at E-V+0.34 eV, and H2 at E-V+0.45 eV. The presence of the E1 and H1 trap levels was confirmed by ODLTS. The H1 trap level is due to Cu-induced substitutional defects. The E1 trap level is believed to be a deep donor and is attributed to the doubly ionized interstitial Cu or a Cu complex. The E1 trap is an effective recombination center and is a lifetime killer. (C) 2000 American Institute of Physics. [S0021- 8979(00)02701-3].

引用

页码：7175 / 7178

页数：4

共 21 条

[1]

[Anonymous], 1996, Proceeding of the 25th IEEE PVSC

[2] EFFECTS OF COPPER IN HIGH-RESISTIVITY CADMIUM TELLURIDE [J].

BIGLARI, B ;

SAMIMI, M ;

HAGEALI, M ;

KOEBEL, JM ;

SIFFERT, P .

JOURNAL OF CRYSTAL GROWTH, 1988, 89 (04) :428-434

[3]

Blood P., 1992, The Electrical Characterization of Semiconductors. Majority Carriers and Electron States

[4]

BRINKMAN AW, 1994, PROPERTIES NARROW GA, V10, P591

[5]

Bube R.H., 1998, PHOTOVOLTAIC MAT

[6] Deep energy levels in CdTe and CdZnTe [J].

Castaldini, A ;

Cavallini, A ;

Fraboni, B ;

Fernandez, P ;

Piqueras, J .

JOURNAL OF APPLIED PHYSICS, 1998, 83 (04) :2121-2126

[7] Copper migration in CdTe heterojunction solar cells [J].

Chou, HC ;

Rohatgi, A ;

Jokerst, NM ;

Thomas, EW ;

Kamra, S .

JOURNAL OF ELECTRONIC MATERIALS, 1996, 25 (07) :1093-1098

[8] THIN-FILM II-VI PHOTOVOLTAICS [J].

CHU, TL ;

CHU, SS .

SOLID-STATE ELECTRONICS, 1995, 38 (03) :533-549

[9] CHARACTERIZATION OF CDS/CDTE THIN-FILM SOLAR-CELLS BY ADMITTANCE SPECTROSCOPY AND DEEP-LEVEL TRANSIENT SPECTROSCOPY [J].

ISETT, LC .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (12) :3508-3517

[10] COPPER IMPURITY BEHAVIOR IN CDTE-FILMS [J].

KUCYS, E ;

JERHOT, J ;

BERTULIS, K ;

BARISS, V .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1980, 59 (01) :91-99

← 1 2 3 →