Ferroelectric domain imaging by defect-luminescence microscopy

被引:33
作者
Dierolf, V
Sandmann, C
Kim, S
Gopalan, V
Polgar, K
机构
[1] Lehigh Univ, Dept Phys, Bethlehem, PA 18015 USA
[2] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA
[3] Hungarian Acad Sci, Inst Solid State Phys & Opt, H-1112 Budapest, Hungary
关键词
D O I
10.1063/1.1538333
中图分类号
O59 [应用物理学];
学科分类号
摘要
In order to study the role of defects within the domain inversion process in ferroelectric LiNbO3 crystals, we investigated the optical properties of intentionally introduced Er3+ defect complexes across a 180degrees domain wall produced at room temperature by electric-field poling. Using site-selective excitation-emission spectroscopy for well chosen excitation energies, we found drastic differences in the Er3+ emission, which are due to a rearrangement of the defect complexes. We used these changes in a confocal luminescence microscope to image ferroelectric-domain structures. This powerful imaging method with a 700 nm, 50 ms spatial and temporal resolution can be used to study real-time dynamics of domain walls. (C) 2003 American Institute of Physics.
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页码:2295 / 2297
页数:3
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