Modelling topographical artifacts in scanning near-field optical microscopy

被引:13
作者
Fenwick, O
Latini, G
Cacialli, F
机构
[1] UCL, Dept Phys & Astron, London WC1E 6BT, England
[2] UCL, LCN, London WC1E 6BT, England
关键词
SNOM; artifacts; simulation; probe radius;
D O I
10.1016/j.synthmet.2004.06.030
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Scanning probe techniques such as atomic force microscopy and scanning tunnelling microscopy have been used extensively for the study of surface properties on the nanoscale. A valuable, but less commonly used technique is scanning near-field optical microscopy (SNOM). This scanning probe technique allows the optical properties of supramolecular structures to be probed at resolutions better than allowed by the diffraction limit. This means that resolution better than 100 nm is achievable even with visible radiation. However, the geometry of the SNOM probe causes images obtained by this method to contain a mixture of optical and topographical information. Where there is no optical contrast on a surface, topography can introduce contrast to the image, which is obviously undesirable. Additionally, the topographical artifacts can cause apparent distortion or displacement of features in the optical image. To have confidence in results obtained by SNOM, the nature of topographical artifacts must be fully understood. Here we present one-dimensional numerical simulations of SNOM images and an investigation into several observable effects. In addition to the occurrence of topography-induced optical contrast we show that a low topographical feature near a higher one can be visible in an image but with low intensity and can appear displaced and distorted if it is approximately a probe diameter from the larger feature. (C) 2004 Published by Elsevier B.V.
引用
收藏
页码:171 / 173
页数:3
相关论文
共 11 条
[1]   Theory of diffraction by small holes [J].
Bethe, HA .
PHYSICAL REVIEW, 1944, 66 (7/8) :163-182
[2]   DIFFRACTION THEORY [J].
BOUWKAMP, CJ .
REPORTS ON PROGRESS IN PHYSICS, 1954, 17 :35-100
[3]   Optical content and resolution of near-field optical images: Influence of the operating mode [J].
Carminati, R ;
Madrazo, A ;
NietoVesperinas, M ;
Greffet, JJ .
JOURNAL OF APPLIED PHYSICS, 1997, 82 (02) :501-509
[4]   Correlating structure with fluorescence emission in phase-separated conjugated-polymer blends [J].
Chappell, J ;
Lidzey, DG ;
Jukes, PC ;
Higgins, AM ;
Thompson, RL ;
O'Connor, S ;
Grizzi, I ;
Fletcher, R ;
O'Brien, J ;
Geoghegan, M ;
Jones, RAL .
NATURE MATERIALS, 2003, 2 (09) :616-621
[5]   Electroluminescence in conjugated polymers [J].
Friend, RH ;
Gymer, RW ;
Holmes, AB ;
Burroughes, JH ;
Marks, RN ;
Taliani, C ;
Bradley, DDC ;
Dos Santos, DA ;
Brédas, JL ;
Lögdlund, M ;
Salaneck, WR .
NATURE, 1999, 397 (6715) :121-128
[6]   Charge- and energy-transfer processes at polymer/polymer interfaces:: A joint experimental and theoretical study [J].
Halls, JJM ;
Cornil, J ;
dos Santos, DA ;
Silbey, R ;
Hwang, DH ;
Holmes, AB ;
Brédas, JL ;
Friend, RH .
PHYSICAL REVIEW B, 1999, 60 (08) :5721-5727
[7]   Facts and artifacts in near-field optical microscopy [J].
Hecht, B ;
Bielefeldt, H ;
Inouye, Y ;
Pohl, DW ;
Novotny, L .
JOURNAL OF APPLIED PHYSICS, 1997, 81 (06) :2492-2498
[8]   Near-field optical lithography of a conjugated polymer [J].
Riehn, R ;
Charas, A ;
Morgado, J ;
Cacialli, F .
APPLIED PHYSICS LETTERS, 2003, 82 (04) :526-528
[9]   High-resolution inkjet printing of all-polymer transistor circuits [J].
Sirringhaus, H ;
Kawase, T ;
Friend, RH ;
Shimoda, T ;
Inbasekaran, M ;
Wu, W ;
Woo, EP .
SCIENCE, 2000, 290 (5499) :2123-2126
[10]   Ultraviolet-visible near-field microscopy of phase-separated blends of polyfluorene-based conjugated semiconductors [J].
Stevenson, R ;
Riehn, R ;
Milner, RG ;
Richards, D ;
Moons, E ;
Kang, DJ ;
Blamire, M ;
Morgado, J ;
Cacialli, F .
APPLIED PHYSICS LETTERS, 2001, 79 (06) :833-835