Effect of deposition conditions and dielectric plasma treatments on the electrical properties of microcrystalline silicon TFTs

被引:14
作者
Kasouit, S [1 ]
Cabarrocas, PRI
Vanderhaghen, R
Bonassieux, Y
Elyaakoubi, M
French, I
Rocha, J
Vitoux, B
机构
[1] Ecole Polytech, Phys Interfaces & Couches Minces Lab, CNRS, UMR 7647, F-91128 Palaiseau, France
[2] Unaxis France SA, Displays Div, F-91120 Palaiseau, France
[3] Philips Res Labs, Redhill RH1 5HA, Surrey, England
关键词
microcrystalline silicon; silicon nitride; thin film transistors; stability;
D O I
10.1016/S0040-6090(02)01247-6
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We study the growth of microcrystalline silicon films on silicon nitride as a function of the deposition conditions and the dielectric plasma treatment. For thin film transistors processed in the bottom gate configuration, we obtain stable transistors with mobilities of 0.7 cm(2) V-1 s(-1), indicating that we have indeed achieved a microcrystalline channel even in the bottom gate approach. Moreover, we found an opposite correlation between the linear mobility and the crystallization kinetics of the material deduced from in-situ ellipsometry measurements; i.e. the faster the crystallization kinetics, the lower the mobility. This result is discussed in terms of smaller grain size for films with fast crystallization, and is supported by Raman spectroscopy measurements. These results provide a guideline for further improving the mobility of the transistors. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:67 / 70
页数:4
相关论文
共 8 条
[2]   Stable microcrystalline silicon thin-film transistors produced by the layer-by-layer technique [J].
Cabarrocas, PRI ;
Brenot, R ;
Bulkin, P ;
Vanderhaghen, R ;
Drévillon, B ;
French, I .
JOURNAL OF APPLIED PHYSICS, 1999, 86 (12) :7079-7082
[3]   Hole and electron field-effect mobilities in nanocrystalline silicon deposited at 150°C [J].
Cheng, IC ;
Wagner, S .
APPLIED PHYSICS LETTERS, 2002, 80 (03) :440-442
[4]  
FRENCH ID, 2001, IDW 01, P367
[5]   Fluorine and hydrogen effects on the growth and transport properties of microcrystalline silicon from SiF4 precursor [J].
Kasouit, S ;
Kumar, S ;
Vanderhaghen, R ;
Cabarrocas, PR ;
French, I .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 2002, 299 :113-117
[6]  
KASOUIT S, 2003, THIN SOLID FILMS
[7]   Microstructure and initial growth characteristics of the low temperature microcrystalline silicon films on silicon nitride surface [J].
Park, YB ;
Rhee, SW .
JOURNAL OF APPLIED PHYSICS, 2001, 90 (01) :217-221
[8]   Crystal size and temperature measurements in nanostructured silicon using Raman spectroscopy [J].
Viera, G ;
Huet, S ;
Boufendi, L .
JOURNAL OF APPLIED PHYSICS, 2001, 90 (08) :4175-4183