Growth kinetics of nitride layers during postdischarge nitriding

被引：11

作者：

Campos, I

Oseguera, J

Figueroa, U

Melendez, E

机构：

[1] ININ, Ocoyoacac 52045, Mexico

[2] ITESM, CEM, DGI, Atizapan 52926, Mexico

[3] UAMA, Dept Mat, Atzcapotzalco 02200, Mexico

来源：

SURFACE & COATINGS TECHNOLOGY | 1998年 / 102卷 / 1-2期

关键词：

nitriding; diffusion coefficients; growth kinetics;

D O I：

10.1016/S0257-8972(97)00692-0

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Experimental data from microwave postdischarge nitriding during growth of a gamma' layer have been used to estimate the diffusion coefficient of nitrogen in gamma'-Fe4N1-x. Based on a model obtained from a mass balance and considering thermodynamic equilibrium at the gamma'/alpha interface during growth, a self-diffusivity of nitrogen in gamma' was obtained: D-N(gamma') = 3.83 x 10(-10) exp(-93500 J/RT) (m(2) S-1), for 773 K < T < 843 K. (C) 1998 Elsevier Science S.A.

引用

页码：127 / 131

页数：5

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