Fabrication and characterization of the pentacene thin film transistor with a Gd2O3 gate insulator

被引：23

作者：

Kang, SJ ^{[1
]}

Chung, KB ^{[1
]}

Park, DS ^{[1
]}

Kim, HJ ^{[1
]}

Choi, Y ^{[1
]}

Jang, MH ^{[1
]}

Noh, M ^{[1
]}

Whang, CN ^{[1
]}

机构：

[1] Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea

来源：

SYNTHETIC METALS | 2004年 / 146卷 / 03期

关键词：

D O I：

10.1016/j.synthmet.2004.08.021

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Pentacene thin film transistors (TFTs) on a high-kappa Gd2O3 gate insulator layer were fabricated and characterized. The Gd2O3 layer was grown by ion beam assisted deposition (IBAD) on a heavily-doped silicon substrate in ultra high vacuum, where the measured dielectric constant of the oxide layer was about 7.4. The maximum field effect mobility and the on/off ratio of the TFTs were 0.1 cm(2)/Vs and about 10(3), respectively. The threshold voltage of the device was dramatically decreased (15.3 V --> -3.5 V) as the high-kappa Gd2O3 layer replaced the SiO2 layer. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：351 / 354

页数：4

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