Local tunneling barrier height imaging on Si(111) surface

被引：8

作者：

Horiguchi, N ^{[1
]}

Yonei, K ^{[1
]}

Miyao, M ^{[1
]}

机构：

[1] Muroran Inst Technol, Muroran, Hokkaido 050, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1997年 / 36卷 / 6B期

关键词：

scanning tunneling microscopy; local tunneling barrier height; silicon; surface; Si(111) 7x7; oxygen adsorption;

D O I：

10.1143/JJAP.36.3864

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We measured the spatial distribution of a local tunneling barrier height by means of the BC height modulation method. We performed this measurement on clean Si(111)7 x 7 surfaces and the surfaces exposed to O-2 gas. On clean surfaces, 7 x 7 structures, which are the same as those in topographic images, were observed in the tunneling barrier height mode. It was found that the spatial distribution of local tunneling barrier height was modified along a step. It was also found that the topography and the spatial distribution of local tunneling barrier height were modified by exposure to O-2 gas.

引用

页码：3864 / 3867

页数：4

共 9 条

[1] New model of the initial stages of Si(111)-(7x7) oxidation [J].