Deformation effects in electronic spectra of the layered semiconductors TlGaS2, TlGaSe2 and TlInS2

被引：46

作者：

Allakhverdiev, KR

Mammadov, TG

Suleymanov, RA

Gasanov, NZ

机构：

[1] Azerbaijan Natl Acad Sci, Inst Phys, Baku 370143, Azerbaijan

[2] Baku State Univ, Baku 370148, Azerbaijan

[3] Tubitak, MRC, Mat & Chem Technol Res Inst, TR-41470 Gebze, Turkey

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2003年 / 15卷 / 08期

关键词：

D O I：

10.1088/0953-8984/15/8/313

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The deformation effects in electronic spectra of the ternary layered semiconductors TIGaS2, TlGaSe2 and TlInS2 are considered. It is shown that the influence of hydrostatic pressure, thermal expansion and variation of composition in solid solutions on the band gap of the crystals investigated can be described in the framework of one common model of deformation potentials. This model appears to be close to that of layered semiconductors of the A(3)B(6) group, attesting to the fact that the main principles of formation of band structure in these two groups of layered crystals are the same.

引用

页码：1291 / 1298

页数：8

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