Lasing properties of GaAs/(Al,Ga)As quantum-cascade lasers as a function of injector doping density

被引：45

作者：

Giehler, M ^{[1
]}

Hey, R ^{[1
]}

Kostial, H ^{[1
]}

Cronenberg, S ^{[1
]}

Ohtsuka, T ^{[1
]}

Schrottke, L ^{[1
]}

Grahn, HT ^{[1
]}

机构：

[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 05期

关键词：

D O I：

10.1063/1.1541099

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The lasing properties of GaAs/Al0.33Ga0.67As quantum-cascade lasers are investigated as a function of injector doping concentration n(s) between 2x10(11) and 1x10(12) cm(-2) per period. Lasing is observed for n(s)greater than or equal to3.5x10(11) cm(-2), with optimal lasing properties (minimum of the threshold current and maximum of the modified characteristic temperature) for n(opt)approximate to6x10(11) cm(-2). With increasing n(s) up to n(opt), the lasing energy of 115 meV exhibits first a blueshift to 135 meV, followed by a redshift to 120 meV for higher doping levels. This shift of the lasing energy as a function of n(s) is discussed in terms of changes in the field distribution, occupation of additional levels above the upper laser level, and electron-electron interactions. (C) 2003 American Institute of Physics.

引用

页码：671 / 673

页数：3

共 14 条

[1] Continuous wave operation of a mid-infrared semiconductor laser at room temperature [J].

Beck, M ;

Hofstetter, D ;

Aellen, T ;

Faist, J ;

Oesterle, U ;

Ilegems, M ;

Gini, E ;

Melchior, H .

SCIENCE, 2002, 295 (5553) :301-305

[2] INTERSUBBAND PLASMONS OF A SEMICONDUCTOR SUPER-LATTICE [J].

BLOSS, WL .

SOLID STATE COMMUNICATIONS, 1983, 46 (02) :143-146

[3] Quantum cascade lasers [J].

Capasso, F ;

Gmachl, C ;

Sivco, DL ;

Cho, AY .

PHYSICS TODAY, 2002, 55 (05) :34-40

[4] NONPARABOLICITY EFFECTS IN A QUANTUM WELL - SUBLEVEL SHIFT, PARALLEL MASS, AND LANDAU-LEVELS [J].

EKENBERG, U .

PHYSICAL REVIEW B, 1989, 40 (11) :7714-7726

[5] QUANTUM CASCADE LASER [J].

FAIST, J ;

CAPASSO, F ;

SIVCO, DL ;

SIRTORI, C ;

HUTCHINSON, AL ;

CHO, AY .

SCIENCE, 1994, 264 (5158) :553-556

[6] Recent progress in quantum cascade lasers and applications [J].

Gmachl, C ;

Capasso, F ;

Sivco, DL ;

Cho, AY .

REPORTS ON PROGRESS IN PHYSICS, 2001, 64 (11) :1533-1601

[7] Ultra-broadband semiconductor laser [J].

Gmachl, C ;

Sivco, DL ;

Colombelli, R ;

Capasso, F ;

Cho, AY .

NATURE, 2002, 415 (6874) :883-887

[8] Terahertz semiconductor-heterostructure laser [J].

Köhler, R ;

Tredicucci, A ;

Beltram, F ;

Beere, HE ;

Linfield, EH ;

Davies, AG ;

Ritchie, DA ;

Iotti, RC ;

Rossi, F .

NATURE, 2002, 417 (6885) :156-159

[9] DOPING DENSITY DEPENDENCE OF INTERSUBBAND TRANSITIONS IN GAAS/ALXGA1-XAS QUANTUM-WELL STRUCTURES [J].

RAMSTEINER, M ;

RALSTON, JD ;

KOIDL, P ;

DISCHLER, B ;

BIEBL, H ;

WAGNER, J ;

ENNEN, H .

JOURNAL OF APPLIED PHYSICS, 1990, 67 (08) :3900-3903

[10] Resonant tunneling in quantum cascade lasers [J].

Sirtori, C ;

Capasso, F ;

Faist, J ;

Hutchinson, AL ;

Sivco, DL ;

Cho, AY .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1998, 34 (09) :1722-1729

← 1 2 →