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Effect of carbon on the valence band offset of Si1-x-yGexCy/Si heterojunctions
被引：15
作者：
Chang, CL
StAmour, A
Sturm, JC
机构：
来源：
IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996
|
1996年
关键词：
D O I：
10.1109/IEDM.1996.553579
中图分类号：
TM [电工技术];
TN [电子技术、通信技术];
学科分类号：
0808 ;
0809 ;
摘要：
We have grown pseudomorphic single crystal Si1-x-yGexCy layers on Si(100) substrates by Rapid Thermal Chemical Vapor Deposition with up to 2.5 percent substitutional carbon. Capacitance-voltage as well as admittance spectroscopy measurements have been used to study the effect of carbon on the valence band offset of compressively strained Si1-x-yGexCy/(100)Si heterojunctions. The valence band offset of Si1-x-yGexCy/Si decreased by 25-30 meV, indicating that all the change in bandgap of Si1-xGex as carbon was added is accommodated in the valence band.
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页码：257 / 260
页数：4
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