Investigation of the low field leakage current mechanism in polysilicon TFT's

被引：21

作者：

Lui, OKB ^{[1
]}

Quinn, MJ

Tam, SWB

Brown, TM

Migliorato, P

Ohshima, H

机构：

[1] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England

[2] Seiko Epson Corp, Base Technol Res Ctr, Nagano, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1998年 / 45卷 / 01期

关键词：

degradation; density-of-states; device modeling; laser recrystallization; leakage current; polysilicon TFT's; 2-D simulation;

D O I：

10.1109/16.658833

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Following extensive characterization and simulation of the behavior of low-temperature laser recrystallized polysilicon thin-film transistors (TFT's), we propose a low field leakage current mechanism which explains to a good degree of accuracy at a low drain to source voltage (V-DS) the dependence of the leakage current on the device's active layer thickness, density-of-states (DOS), bias-stress degradation and active layer length.

引用

页码：213 / 217

页数：5

共 4 条

[1] DETERMINATION OF GAP STATE DENSITY IN POLYCRYSTALLINE SILICON BY FIELD-EFFECT CONDUCTANCE [J].