Activation energy of electromigration in copper thin film conductor lines

被引：6

作者：

Gladkikh, A

Lereah, Y

Karpovski, M

Palevski, A

Kaganovskii, YS

机构：

来源：

MATERIALS RELIABILITY IN MICROELECTRONICS VI | 1996年 / 428卷

关键词：

D O I：

10.1557/PROC-428-55

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Activation energy of electromigration damage was determined as 1.2 eV for Cu lines, indicating grain boundary paths for electromigration. The surface diffusion was found to play a role during electromigration in Cu and impeded the failure process.

引用

页码：55 / 60

页数：6