Laser-diode pumping (1.4 and 1.56μm) of gain-shifted thulium-doped fibre amplifier

被引：35

作者：

Kasamatsu, T

Yano, Y

Ono, T

机构：

[1] NEC Corp Ltd, Syst Devices & Fundamental Res, Tsukuba, Ibaraki 3058501, Japan

[2] NEC Corp Ltd, Devices Div, Nakahara Ku, Kawasaki, Kanagawa 211, Japan

[3] NEC Corp Ltd, Comp & Commun Media Res, Miyamae Ku, Kawasaki, Kanagawa 2168555, Japan

来源：

ELECTRONICS LETTERS | 2000年 / 36卷 / 19期

关键词：

D O I：

10.1049/el:20001143

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors have developed a novel laser-diode pumping scheme (1.4 and 1.56 mu m) for a thulium-doped fibre amplifier operating in the 1475 to 1502nm wavelength band. They report a small-signal gain > 25 dB, a noise figure < 7dB, an optical-to-optical efficiency of 10.3%, and a total output power of +17.1 dBm.

引用

页码：1607 / 1609

页数：3

共 9 条

[1] Gain-shifted thulium-doped fibre amplifiers employing novel high concentration doping technique [J].