Interfacial phenomena of molten silicon: Marangoni flow and surface tension

被引:26
作者
Hibiya, T
Nakamura, S
Mukai, K
Niu, ZG
Imaishi, N
Nishizawa, S
Yoda, S
Koyama, M
机构
[1] NEC Corp Ltd, Fundamental Res Labs, Tsukuba, Ibaraki 3058501, Japan
[2] Kyushu Inst Technol, Dept Mat Sci & Engn, Tobata Ku, Kitakyushu, Fukuoka 8048550, Japan
[3] Kyushu Univ, Inst Adv Mat Study, Kasuga, Fukuoka 8168580, Japan
[4] MITI, Agcy Ind Sci & Technol, Electrotech Lab, Frontier Technol Div, Tsukuba, Ibaraki 3058568, Japan
[5] Natl Space Dev Agcy Japan, Space Expt Dept, Tsukuba, Ibaraki 3058505, Japan
[6] Japan Space Utilizat Promot Ctr, Frontier Joint Res Program Dept, Shinjuku Ku, Tokyo 1698624, Japan
来源
PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES | 1998年 / 356卷 / 1739期
关键词
molten silicon; microgravity; liquid column; instability; surface tension; oxygen partial pressure;
D O I
10.1098/rsta.1998.0195
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Temperature oscillation due to the oscillatory Marangoni flow was measured for a molten half-zone silicon column (10 mm high and 10 mm in diameter with a temperature difference of 150 K between the upper and lower solid-liquid interfaces) under microgravity by using fine thermocouples. The flow is in a hypercritical condition; that is, the Marangoni number is estimated to be over 10000. The structure of the Marangoni instability is two-fold symmetry for the small aspect ratio (height/radius) Gamma of 1 and one-fold symmetry for the melt with Gamma of 2. The surface tension of molten silicon was measured by a sessile drop method in carefully controlled ambient atmospheres with various oxygen partial pressures from 4 x 10(-22) to 6 x 10(-19) MPa. These measurements showed that the surface tension and its temperature coefficient showed a marked dependence on oxygen partial pressure. Accordingly the effect; of oxygen partial pressure on the Marangoni flow should be made clear. Moreover, Marangoni flow at the flat surface, which corresponds to the flow for the Czochralski growth system, should also be studied.
引用
收藏
页码:899 / 909
页数:11
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