Improved equivalent circuit and analytical model for amorphous silicon solar cells and modules

被引:166
作者
Merten, J [1 ]
Asensi, JM
Voz, C
Shah, AV
Platz, R
Andreu, J
机构
[1] Univ Barcelona, Dept Fis Aplicada & Elect, E-08028 Barcelona, Spain
[2] Inst Microtech, Rue Bregnet, Switzerland
关键词
amorphous silicon solar cells and modules; analytical model; I(V) characteristics; outdoor measurements; recombination; mu tau-product degradation;
D O I
10.1109/16.658676
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An improved equivalent circuit for hydrogenated amorphous silicon (a-Si:H) solar cells and modules is presented. It is based on the classic combination of a diode with an exponential current-voltage characteristic, of a photocurrent source plus a new term representing additional recombination losses in the i-layer of the device. This model/equivalent circuit matches the I(V) curves of a-Si:H cells over an illumination range of six orders of magnitude. The model clearly separates effects related to the technology of the device (series and parallel resistance) and effects related to the physics of the pin-junction (recombination losses). It also allows an effective mu tau product in the i-layer of the device to be determined, characterizing its state of degradation.
引用
收藏
页码:423 / 429
页数:7
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