Amorphous silicon thin-film transistors with a hot-wire active-layer deposited at high growth rate

被引：3

作者：

Chu, V ^{[1
]}

Jarego, J ^{[1
]}

Silva, H ^{[1
]}

Silva, T ^{[1
]}

Boucinha, M ^{[1
]}

Brogueira, P ^{[1
]}

Conde, JP ^{[1
]}

机构：

[1] Inst Engn Sistemas & Computadores, Lisbon, Portugal

来源：

AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY - 1997 | 1997年 / 467卷

关键词：

D O I：

10.1557/PROC-467-905

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-quality thin film transistors (TFT) with hydrogenated amorphous silicon (a-Si:H) deposited by hot-wire (HW) chemical vapor deposition as the active layer at growth rates above 20 Angstrom/s are compared to TFTs with a-Si:H deposited by RF glow discharge at 1 Angstrom/s. The subgap absorption measured by the constant photocurrent method and steady-state photoconductivity measured between source and drain are used to characterize the a-Si:H in the TFT. The activation energy of the dark conductivity is measured as a function of the gate voltage to obtain the position of the Fermi level. The effect of a bias stress on the TFT transfer curve is obtained.

引用

页码：905 / 910

页数：6