On the use of bismuth in quantum wells

被引：6

作者：

Dauscher, A ^{[1
]}

Lenoir, B ^{[1
]}

Boffoue, O ^{[1
]}

Devaux, X ^{[1
]}

Martin-Lopez, R ^{[1
]}

Scherrer, H ^{[1
]}

机构：

[1] Ecole Mines, URA CNRS 155, Phys Mat Lab, F-54042 Nancy, France

来源：

PROCEEDINGS ICT'97 - XVI INTERNATIONAL CONFERENCE ON THERMOELECTRICS | 1997年

关键词：

D O I：

10.1109/ICT.1997.667177

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

A rapid survey of some theoretical considerations concerning the use of multiple quantum well structures (MQWS) in thermoelectricity is given as well as why bismuth can be a perspective material for the development of a new class of thermoelectric systems. Problems arising from Bi film synthesis are discussed, in relation with the preparation of Bi-based MQWS. Some experimental results are reported on pulsed laser deposited Bi films prepared in out laboratory.

引用

页码：429 / 433

页数：5