Wafer and reticle positioning system for the Extreme Ultraviolet Lithography Engineering Test Stand

被引:3
作者
Wronosky, JB [1 ]
Smith, TG [1 ]
Craig, MJ [1 ]
Sturgis, BR [1 ]
Darnold, JR [1 ]
Werling, DK [1 ]
Kincy, MA [1 ]
Tichenor, DA [1 ]
Williams, ME [1 ]
Bischoff, P [1 ]
机构
[1] Sandia Natl Labs, Albuquerque, NM 87185 USA
来源
EMERGING LITHOGRAPHIC TECHNOLOGIES IV | 2000年 / 3997卷
关键词
EUVL; maglev; stages; lithography; positioning system;
D O I
10.1117/12.390126
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper is an overview of the wafer and reticle positioning system of the Extreme Ultraviolet Lithography (EUVL) Engineering Test Stand (ETS). EUVL represents one of the most promising technologies for supporting the integrated circuit (IC) industry's lithography needs for critical features below 100nm. EUVL research and development includes development of capabilities for demonstrating key EUV technologies. The ETS is under development at the EW Virtual National Laboratory, to demonstrate EUV full-field imaging and provide data that supports production-tool development. The stages and their associated metrology operate in a vacuum environment and must meet stringent outgassing specifications. A tight tolerance is placed on the stage tracking performance to minimize image distortion and provide high position repeatability. The wafer must track the reticle with less than +/-3nm of position error and jitter must not exceed 10nm rms. To meet these performance requirements, magnetically levitated positioning stages utilizing a system of sophisticated control electronics will be used. System modeling and experimentation have contributed to the development of the positioning system and results indicate that desired ETS performance is achievable.
引用
收藏
页码:829 / 839
页数:11
相关论文
共 3 条
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WILLIAMS M, P SPIE C MARCH 1997, V3051
[2]  
WILLIAMS ME, 1999, ASPE 14 ANN M MONT C
[3]  
WRONOSKY JB, 1995, NASA 3 INT S MAGN SU