Non-Ohmic conduction in polydiacetylene thin films

被引：16

作者：

Aleshin, A

Chu, SW

Kozub, VI

Lee, SW

Lee, JY

Lee, SH

Kim, DW

Park, YW ^{[1
]}

机构：

[1] Seoul Natl Univ, Sch Phys, Seoul 151747, South Korea

[2] Seoul Natl Univ, ICondensed Matter Res Inst, Seoul 151747, South Korea

[3] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

CURRENT APPLIED PHYSICS | 2005年 / 5卷 / 01期

关键词：

polydiacetylene (PDA) thin film; temperature dependent I-V characteristics; field effect transistor (FET); tunneling conduction at low temperature;

D O I：

10.1016/j.cap.2003.11.087

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have studied the current-voltage (I-V) characteristics of polydiacetylene, (PDA) thin films in the temperature region 300-1.7 K. It was found that at electric fields higher than 2 x 10(4) V/cm, the I-V characteristics are strongly super-linear with negative temperature coefficient of starting voltage. Negative gate voltage increases the source-drain current (the effect is more pronounced at low temperature), whereas the magnetic field up to 7 T does not affect it. The results demonstrate that at low temperature the charge transport is mainly supported due to a charge injection and tunneling from the metallic banks, whereas at higher temperatures the activation energy is related to the band gap mismatch between the different polymer chains or granules. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：85 / 89

页数：5

共 18 条

[1] REINVESTIGATION OF GENERATION AND TRANSPORT OF CHARGE-CARRIERS IN CRYSTALLINE POLYDIACETYLENES (PDAS) [J].