Single layer nitride capacitor dielectric film and high concentration doping technology for 1Gb/4Gb trench-type DRAMs

被引：6

作者：

Saida, S ^{[1
]}

Sato, T ^{[1
]}

Mizushima, I ^{[1
]}

Ozawa, Y ^{[1
]}

Tsunashima, Y ^{[1
]}

机构：

[1] Toshiba Corp, Microelect Engn Lab, Isogo Ku, Kanagawa 235, Japan

来源：

INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST | 1997年

关键词：

D O I：

10.1109/IEDM.1997.650378

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We propose a novel CVD-SiN deposition process for Single layer Nitride film using SiCl4 as the source material to reduce the Si-H bond in the SiN film and a high concentration doping process from vapor phase into a deep trench side-wall. Combining both technologies, an equivalent film thickness for 1G/4Gbit DRAM is successfully reduced below 4.0 nm without especial high dielectric constant materials.

引用

页码：265 / 268

页数：4