Integrated microsystem for blue/UV detection

被引：7

作者：

Pauchard, A ^{[1
]}

Furrer, B ^{[1
]}

Randjelovic, Z ^{[1
]}

Rochas, A ^{[1
]}

Manic, D ^{[1
]}

Popovic, RS ^{[1
]}

机构：

[1] Swiss Fed Inst Technol, Inst Microsyst, EPFL, CH-1015 Lausanne, Switzerland

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 2000年 / 85卷 / 1-3期

关键词：

UV sensor; UV detection; flame detector; CMOS;

D O I：

10.1016/S0924-4247(00)00332-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A fully integrated sensor microsystem for blue/ultraviolet (UV) radiation detection is presented. The photosensitive part includes a 1-mm(2) blue/UV-selective stripe-shaped photodiode, which has maximal response in the short-wavelength range. A 15-times smaller infrared (IR) photodiode is added to compensate the parasitic photocurrent generated by the blue/UV photodiode in the IR range. Thus, a very high ratio of the responsivities at 420 nm and 1 mu m of 1500 is achieved. A transimpedance amplifier with 1 G Omega feedback resistor followed by an inverter is integrated on the same silicon chip. The main features of the operational amplifier (op amp) are a low offset (< 0.5 mV) and fail-safe operation. This sensor has a maximal responsivity of 150 mV/nW at lambda = 420 nm, corresponding to 44% quantum efficiency. The system has a noise equivalent power of 5 x 10(-13) W. The 2.2 mm(2) microsystem is realized in a standard CMOS 0.5 mu m process without any post-processing step. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：99 / 105

页数：7

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