Fully atomistic analysis of diffuse X-ray scattering spectra of silicon defects

被引：10

作者：

Nordlund, K ^{[1
]}

Partyka, P ^{[1
]}

Averback, RS ^{[1
]}

机构：

[1] Univ Illinois, Mat Res Lab, Urbana, IL 61801 USA

来源：

DEFECTS AND DIFFUSION IN SILICON PROCESSING | 1997年 / 469卷

关键词：

D O I：

10.1557/PROC-469-199

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Diffuse X-ray scattering is a useful method for studying defects in silicon and metals. Although the traditional approaches of analyzing experimental diffuse X-ray scattering data have given much information about the size of defects and defect clusters, they are not very well suited for determining the atomic configuration. We present a fully atomistic computational method to calculate the diffuse X-ray scattering line profile of an arbitrary atomic configuration, and compare line profiles of point defects and Frenkel pair configurations with experiment.

引用

页码：199 / 204

页数：6