Single-electron transistor as a charge sensor for semiconductor applications

被引：29

作者：

Berman, D ^{[1
]}

Zhitenev, NB

Ashoori, RC

Smith, HI

Melloch, MR

机构：

[1] MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA

[2] MIT, Dept Phys, Cambridge, MA 02139 USA

[3] Purdue Univ, Dept Elect Engn & Comp Sci, W Lafayette, IN 47907 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1997年 / 15卷 / 06期

关键词：

D O I：

10.1116/1.589741

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We describe the use of aluminum single-electron transistors (SETs) to measure, with extremely high sensitivity, the fluctuation of charge in semiconductor quantum dots. Our method of fabricating SETs results in excellent reliability and reproducibility. (C) 1997 American Vacuum Society.

引用

页码：2844 / 2847

页数：4

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