Surface micromachined BAW resonators based on AlN

被引：12

作者：

Lanz, R ^{[1
]}

Carazzetti, P ^{[1
]}

Muralt, P ^{[1
]}

机构：

[1] EPFL, Swiss Fed Inst Technol, Ceram Lab, CH-1015 Lausanne, Switzerland

来源：

2002 IEEE ULTRASONICS SYMPOSIUM PROCEEDINGS, VOLS 1 AND 2 | 2002年

关键词：

D O I：

10.1109/ULTSYM.2002.1193560

中图分类号：

O42 [声学];

学科分类号：

070206 ; 082403 ;

摘要：

This contribution deals with surface micromachined BAW resonators based on AlN thin films. Process, design issues and first results are presented and discussed. Devices with two resonators in series having a resonance frequency between 7 and 8 GHz show promising results. Coupling coefficients of k(t)(2)=3.8% and quality factors of 100 to 150 have been obtained with resonators having a approximate size of 30x30 mum adapted for a 50Omega system. These results are clearly inferior to earlier 2 results obtained with SMR designs (k(t)(2)=5.5% and Q=580). Reasons are too high serial resistances caused by bad step coverage of the top electrode, possibly also incomplete etching of the sacrificial layer, and warping by too large film stresses.

引用

页码：981 / 983

页数：3