Room temperature 1.3 μm emission from self-assembled GaSb/GaAs quantum dots

被引：22

作者：

Farrer, I

Murphy, MJ

Ritchie, DA

Shields, AJ

机构：

[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

[2] Toshiba Res Euroed Ltd, Cambridge CB4 0WE, England

来源：

JOURNAL OF CRYSTAL GROWTH | 2003年 / 251卷 / 1-4期

关键词：

low dimensional structures; molecular beam epitaxy; semiconducting gallium compounds; infrared devices;

D O I：

10.1016/S0022-0248(02)02398-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We describe the growth of GaSb/GaAs self-assembled quantum dots by MBE and also their incorporation into modulation-doped quantum well devices. The importance of the use of a valved arsenic source is also discussed. By varying the deposition thickness of the GaSb layer, it is possible to tune the emission wavelength from the dot ensemble to 1.3 mum at room temperature indicating the potential for optical communications applications. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：771 / 776

页数：6

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