Unity-Order Index Change in Transparent Conducting Oxides at Visible Frequencies

被引：438

作者：

Feigenbaum, Eyal ^{[1
]}

Diest, Kenneth ^{[1
]}

Atwater, Harry A. ^{[1
]}

机构：

[1] CALTECH, Thomas J Watson Lab Appl Phys, Pasadena, CA 91125 USA

来源：

NANO LETTERS | 2010年 / 10卷 / 06期

关键词：

Active plasmonics; index modulation; transparent conducting oxides; indium tin oxide; electro-optical devices; waveguides; PLASMONICS; MODULATORS;

D O I：

10.1021/nl1006307

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report a method for obtaining unity-order refractive index changes in the accumulation layer of a metal-oxide-semiconductor heterostructure with conducting oxide as the active material. Under applied field, carrier concentrations at the dielectric/conducting oxide interface increase from 1 x 10(21)/cm(3) to 2.8 x 10(22)/cm(3), resulting in a local refractive index change of 1.39 at 800 nm. When this structure is modeled as a plasmonic waveguide, the change corresponds to a modal index change of 0.08 for the plasmonic mode,

引用

页码：2111 / 2116

页数：6

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