Future technology pathways of terrestrial III-V multijunction solar cells for concentrator photovoltaic systems

被引：129

作者：

Law, Daniel C. ^{[1
]}

King, R. R. ^{[1
]}

Yoon, H. ^{[1
]}

Archer, M. J. ^{[2
]}

Boca, A. ^{[1
]}

Fetzer, C. M. ^{[1
]}

Mesropian, S. ^{[1
]}

Isshiki, T. ^{[1
]}

Haddad, M. ^{[1
]}

Edmondson, K. M. ^{[1
]}

Bhusari, D. ^{[1
]}

Yen, J. ^{[1
]}

Sherif, R. A. ^{[1
]}

Atwater, H. A. ^{[2
]}

Karam, N. H. ^{[1
]}

机构：

[1] Boeing Spectrolab Inc, Sylmar, CA 91342 USA

[2] CALTECH, Pasadena, CA 91125 USA

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2010年 / 94卷 / 08期

关键词：

III-V materials; Multijunction solar cells; Terrestrial concentrator photovoltaic systems; Metamorphic; Wafer bonding;

D O I：

10.1016/j.solmat.2008.07.014

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Future terrestrial concentrator cells will likely feature four or more junctions. The better division of the solar spectrum and the lower current densities in these new multijunction cells reduce the resistive power loss ((IR)-R-2) and provide a significant advantage in achieving higher efficiencies of 45-50%. The component subcells of these concentrator cells will likely utilize new technology pathways such as highly metamorphic materials, inverted crystal growth, direct-wafer bonding, and their combinations to achieve the desired bandgaps while maintaining excellent device material quality for optimal solar energy conversion. Here, we report preliminary results of two technical approaches: (1) metamorphic similar to 1 eV GalnAs subcells in conjunction with an inverted growth approach and (2) multijunction cells on wafer-bonded, layer-transferred epitaxial templates. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：1314 / 1318

页数：5

共 17 条

[1]

[Anonymous], P 4 INT C SOL CONC I

[2] GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates [J].