Edge dislocations in crystal structures considered as traveling waves in discrete models

被引:32
作者
Carpio, A [1 ]
Bonilla, LL
机构
[1] Univ Complutense Madrid, Dept Matemat Aplicada, E-28040 Madrid, Spain
[2] Univ Carlos III Madrid, Escuela Politecn Super, Dept Matemat, Leganes 28911, Spain
关键词
D O I
10.1103/PhysRevLett.90.135502
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The static stress needed to depin a 2D edge dislocation, the lower dynamic stress needed to keep it moving, its velocity, and displacement vector profile are calculated from first principles. We use a simplified discrete model whose far field distortion tensor decays algebraically with distance as in the usual elasticity. Dislocation depinning in the strongly overdamped case (including the effect of fluctuations) is analytically described. N parallel edge dislocations whose average interdislocation distance divided by the Burgers vector of a single dislocation is L >> 1 can depin a given one if N = O(L). Then a limiting dislocation density can be defined and calculated in simple cases.
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页数:4
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