Tunable low-distortion BiCMOS transconductance amplifiers

被引:8
作者
Mahattanakul, J [1 ]
Toumazou, C
机构
[1] Mahanakorn Univ Technol, Bangkok, Thailand
[2] Univ London Sch Pharm, London, England
关键词
D O I
10.1049/el:19980172
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A linear BiCMOS transconductance amplifier based on a MOS transistor operated in the linear region is presented. The circuit uses regulated cascode techniques to restrict the variation of the drain-source voltage of the MOS device and hence enhance the linearity of the V-I conversion. Simulation results confirm that the proposed circuits have superior linearity compared with other transconductance amplifiers operating in the linear region.
引用
收藏
页码:175 / 176
页数:2
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