Influence of dopant size on the junction properties of polyaniline

被引：42

作者：

Chung, SF

Wen, TC ^{[1
]}

Gopalan, A

机构：

[1] Natl Cheng Kung Univ, Dept Chem Engn, Tainan 701, Taiwan

[2] Alagappa Univ, Dept Ind Chem, Karaikkudi, Tamil Nadu, India

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2005年 / 116卷 / 02期

关键词：

polyaniline; dopant; Schottky diodes; electronic parameters;

D O I：

10.1016/j.mseb.2004.09.023

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Polyaniline (PANI) doped with sulfate anion (SA) or methane sulfonate anion (MSA) was used to fabricate the Schottky devices: Al/PANI(SA)/ITO and Al/PANI(MSA)/ITO. Current density (J)-voltage (V) measurements and AC impedance analysis were used to evaluate the junction parameters of the devices, ideality factor, barrier height and rectification ratios. An equivalent circuit was developed and the impedance parameters were evaluated. The differences injunction parameters between the devices were analyzed in terms of the differences in dopability of PANI with the dopants, morphology of the films and mobility of carriers in Al/conducting polymer junction. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：125 / 130

页数：6

共 32 条

[1] Enzymatic synthesis and characterization of a novel water-soluble polyaniline: Poly(2,5-diaminobenzenesulfonate) [J].