Shell filling of artificial atoms within density-functional theory

被引:102
作者
Lee, IH [1 ]
Rao, V
Martin, RM
Leburton, JP
机构
[1] Univ Illinois, Beckman Inst Adv Sci & Technol, Urbana, IL 61801 USA
[2] Univ Illinois, Dept Phys, Urbana, IL 61801 USA
[3] Univ Illinois, Mat Res Lab, Urbana, IL 61801 USA
关键词
D O I
10.1103/PhysRevB.57.9035
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The electronic structures of three-dimensional quantum dots described by parabolic and nonparabolic confinements are calculated using spin-density-functional theory. For representative cases we determined the electron-number-dependent capacitive energy, the energy required to add an additional electron to a quantum dot, by self-consistent solution of the equations using a finite difference method with preconditioned conjugate gradient minimization. Shell-filling and spin configuration effects are identified, as found in electronic structure of the atoms. The peak positions of the capacitive energy at the number of electrons N=2, 6, and 12 for the cylindrical symmetric quantum dot are in good agreement with experimental data. [S0163-1829(98)04811-5].
引用
收藏
页码:9035 / 9042
页数:8
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