Analysis on the formation and elimination of filamentary and planar voids in silicon carbide bulk crystals

被引：11

作者：

Hofmann, D ^{[1
]}

Bickermann, M ^{[1
]}

Hartung, W ^{[1
]}

Winnacker, A ^{[1
]}

机构：

[1] Univ Erlangen Nurnberg, Dept Mat Sci 6, DE-91058 Erlangen, Germany

来源：

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2 | 2000年 / 338-3卷

关键词：

macrodefects; micropipe; planar defects;

D O I：

10.4028/www.scientific.net/MSF.338-342.445

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The closing of micropipes during SiC solution growth is frequently observed. This closing is investigated theoretically showing that both mechanical and surface energy are similar for the open and closed defect geometry. Thus capillary action should be the dominating mechanism for the elimination of micropipes during SiC liquid phase growth. A model for planar/macrodefect formation is presented giving indications that these defects are a result of negative crystal growth.

引用

页码：445 / 448

页数：4

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