Crystal-structure refinement, thermal expansion, and chemical distortion of Bi2Ga4O9

被引:10
作者
Filatov, S. K.
Krivovichev, S. V.
Aleksandrova, Yu. V.
Bubnova, R. S.
Egorysheva, A. V.
Burns, P.
Kargin, Yu. F.
Volkov, V. V.
机构
[1] St Petersburg State Univ, St Petersburg 199164, Russia
[2] Russian Acad Sci, IV Grebenshchikov Silicate Chem Inst, St Petersburg 199155, Russia
[3] Russian Acad Sci, NS Kurnakov Gen & Inorgan Chem Inst, Moscow 119991, Russia
[4] Univ Notre Dame, Notre Dame, IN 46556 USA
关键词
Thermal Expansion; Unit Cell Parameter; Coordination Polyhedron; Bismuth Oxide; Gallium Atom;
D O I
10.1134/S0036023606060052
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
Single crystals of Bi2Ga4O9 are grown from a solution in a bismuth oxide melt. The structure (orthorhombic, space group Pbam, a = 7.918(2)Delta, b = 8.299(2)Delta, c = 5.894(2)Delta, Z = 2) is refined to R = 0.052 in the anisotropic approximation based on single-crystal X-ray diffraction data. The structure is a framework. The bismuth(III) atoms are sixfold coordinated; gallium(III) exists in both tetrahedral and octahedral coordinations. The thermal expansion of Bi2Ga4O9 is studied by high-temperature X-ray powder diffraction method and is found to be sharply anisotropic. A structural interpretation of the anisotropy is proposed. Chemical distortion in the Bi2M4O9 compounds with M = Fe(III), Al, or Ga is analyzed and compared with the thermal expansion of Bi2Ga4O9.
引用
收藏
页码:878 / 883
页数:6
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