Structure and transport properties of microcrystalline SiGe films

被引：4

作者：

Edelman, F ^{[1
]}

Stolzer, M ^{[1
]}

Raz, T ^{[1
]}

Komem, Y ^{[1
]}

Vining, CB ^{[1
]}

Zeindl, H ^{[1
]}

Zaumseil, P ^{[1
]}

机构：

[1] Technion Israel Inst Technol, Mat Engn Fac, IL-32000 Haifa, Israel

来源：

PROCEEDINGS ICT'97 - XVI INTERNATIONAL CONFERENCE ON THERMOELECTRICS | 1997年

关键词：

D O I：

10.1109/ICT.1997.667091

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

Amorphous Si1-xGex films (x=0, 0.25, 0.5, 0.75 and 1, having Boron concentrations of 5.10(18), 5.10(19) and 5.10(20) cm(-3)), were deposited at low temperature by a molecular beam processing on SiO2/Si(001) substrates. Samples were studied by in-situ TEM and in-situ XRD to follow the crystallization process. In addition transport properties were studied in samples which were annealed in vacuum by a hot-wall furnace at temperatures between 500 to 900 degrees C for 1 hour. The microstructure of B-doped SiGe Rims is characterized by a relatively large grain size (about 1 mu m). The Si0.5Ge0.5 films have a rather high and temperature independent Hall mobility (25 to 60 cm(2)/Vsec), Seebeck coefficient (similar to 150 to 250 mu V/K at room temperature) and conductivity ((200 to 2000 (Ohm.cm)(-1) at room temperature). Therefore, the highly-doped mu c-SiGe films that we produce in the present research project show transport characteristics comparable to the sintered SiGe materials for thermoelectric applications..

引用

页码：232 / 235

页数：4